Ahmed
Bensaada, Ph.D. Communications en physique |
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b-
Travaux cités dans des ouvrages de référence
1- "Handbook
Series on Semiconductor Parameters",
M. Levinshtein, S. Rumyantsev, Michael Shur,
2-
"Luminescence
of Solids", D. R. Vij, Publié par Springer, 1998 |
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c- Articles de revues
1- “Band alignment and barrier height considerations for the quantum-confined Stark effect”, R.Y-F. Yip, P. Desjardins, A. Aït-Ouali, L. Isnard, H. Marchand, A. Bensaada, J.L. Brebner, J.F. Currie et R.A. Masut, J. Vac. Sci. Technol. A 16, 801-804 (1998). 2- “Effect of Interface Roughness and Well Width on Differential Reflection Dynamics in InGaAs/InP Quantum-Wells”, Y.G. Zhao, Y.H. Zou, J.J Wang, Y.D. Qin, X.L. Huang, R.A. Masut et A. Bensaada, Appl. Phys. Lett. 72, 97 (1998). 3- “Erratum: Strain and relaxation effects in InAsP/InP multiple quantum well Stark effect optical modulators devices grown by metal-organic vapor phase epitaxy”, R.Y.-F Yip, A. Aït-Ouali, A. Bensaada, P. Desjardins, M. Beaudoin, L. Isnard, J.L. Brebner, J.F. Currie and R.A. Masut, J. Appl. Phys. 82, 6372 (1997). 4- “Strain and relaxation effects in InAsP/InP multiple quantum well Stark effect optical modulators devices grown by metal-organic vapor phase epitaxy”, R.Y.-F Yip, A. Aït-Ouali, A. Bensaada, P. Desjardins, M. Beaudoin, L. Isnard, J.L. Brebner, J.F. Currie and R.A. Masut, J. Appl. Phys. 81, 1905 (1997). 5- "Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapor phase epitaxy", Y. Ababou, P. Desjardins, A. Chennouf, R.A. Masut, A. Yelon, M. Beaudoin, A. Bensaada, R. Leonelli and G. L'Espérance, Semicond. Science Technol. 12, 550 (1997). 6- “Self-consistent determination of the band offsets in InAsXP1-X/InP Strained Layer Quantum Wells and the bowing parameter of bulk InAsXP1-X”, M. Beaudoin, A. Bensaada, R. Leonelli, P. Desjardins, R.A. Masut, L. Isnard, A. Chennouf and G. L'Espérance., Phys. Rev. B. 53, 1990 (1996). 7- “Transmission electron microscopy and cathodoluminescence of tensile-strained GaxIn1-xP/InP heterostructures. II. On the origin of luminescence heterogenieties in tensile stress relaxed GaxIn1-xP/InP heterostructures”, F. Cléton, B. Sieber, A. Lefebvre, A. Bensaada, R.A. Masut, J.M. Bonard, and J.D. Ganière, J. Appl. Phys, vol 80, no 2, 837 (1996) 8- “Transmission electron microscopy and cathodoluminescence of tensile-strained GaxIn1-xP/InP heterostructures. I. Spatial variations of the tensile stress relaxation”, F. Cléton, B. Sieber, A. Lefebvre, A. Bensaada, R.A. Masut, J.M. Bonard, J.D. Ganière, and M. Ambri, J. Appl. Phys, vol 80, no 2, 827 (1996) 9- “Band offsets of InAsXP1-X/InP strained layer quantum wells grown by LP-MOVPE using TBAs”, M. Beaudoin, R.A. Masut, L. Isnard, P.Desjardins, A. Bensaada, G. L'Espérance and R. Leonelli,. Mat. Res. Soc. Symp. Proc. Vol. 358, 1005 (1995). 10- "Cathodoluminescence and TEM investigations of stress relaxation mechanisms in GaxIn1-xP/InP heterostructures.", F. Cléton, B. Sieber, A. Lefebvre, A. Bensaada, R.A. Masut, J.M. Bonard, J.D. Ganière, and M. Ambri, Microscopy of Semiconducting Materials, pages 729-32. IOP Publishing, 1995. 11- "Misfit strain, relaxation and band-gap shift in GaxIn1-xP epitaxial layers on InP substrates", A. Bensaada, A. Chennouf, R.W. Cochrane, J.T. Graham, R. Leonelli et R.A. Masut, J. Appl. Phys. 75, 3024 (1994). 12- "Band alignment in GaxIn1-xP/InP heterostuctures", A. Bensaada, J. T. Graham, J. L. Brebner, A. Chennouf, R. W. Cochrane, R. Leonelli et R. A. Masut, Appl. Phys. Lett. 64, 273 (1994). 13- "Combustion of effluent gases from a III-V metal-organic vapor phase epitaxy system", P. Cova, R.A. Masut, C.A. Tran, A. Bensaada et J.F. Currie, Combust. Sci. and Techn. 97, 1 (1994). 14- "Surface morphology and lattice distorsion of heteroepitaxial GaInP on InP", A. Bensaada, R.W. Cochrane, R.A. Masut, R. Leonelli et G. Kajrys, J. Cryst. Growth 130, 433 (1993).
15- "Alloy
composition dependence of defects energy levels in GaxIn1-xP/InP:
Fe and GaxIn1-xP/InP:S (x
0.24)", Y. G. Zhao, J. L. Brebner, R.A.
Masut, G. Zhao, A. Bensaada et J. Z. Wan, J. Appl. Phys. 74,
1862 (1993).
16- "Elimination
des hydrures métalliques des déchets gazeux d'un réacteur LP-MOCVD pour
la croissance de composés (In,Ga)(As,P)", P. Cova, R.A. Masut, R. Lacoursière, A. Bensaada, C.A. Tran et
J.F. Currie, Can. J. Phys. 71,
307 (1993).
17- "Growth
and structural properties of epitaxial GaInP on InP",
A. Bensaada, A. Chennouf, R.W. Cochrane, R. Leonelli, P. Cova
et R.A. Masut, J. Appl. Phys. 71,
1737 (1992). 18- "Growth efficiency and distribution coefficient of GaInP/InP epilayers and heterostructures", A. Bensaada, R.W. Cochrane et R.A. Masut, Can. J. Phys. 70, 783 (1992).
19- "Observation
of persistant photoconductivity in GaxIn1-xP/InP:Fe
(0<x<0.25)", Y.G. Zhao, G.
Zhao, J.L. Brebner, A. Bensaada et R.A. Masut, Semicond. Sci. Technol. 7, 1359 (1992).
20- "Effet
des paramètres de croissance sur les couches épitaxiales d'InP obtenues
par MOCVD à basse pression",
P. Cova, R.A. Masut, J.F. Currie, A. Bensaada, R. Leonelli et
C.A. Tran, Can. J. Phys. 69,
412 (1991). |
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d- Conférences
1- "Effect of band offset and finite barrier height on the quantum-confined Stark effect", R. Y.-F. Yip, P. Desjardins , A. Aït-Ouali, L. Isnard, H. Marchand, A. Bensaada, J.L. Brebner, J.F. Currie and R.A. Masut, 9th International Conference on Indium Phosphide and Related Materials (IPRM '97), New Jersey, 11-15 mai 1997.. 2- "Localization
of Excitons by Potential Fluctuations and its Effect on the Stokes Shift
in Quantum Confined Heterostructures",
A. Ait-Ouali, A. Chennouf, R. Y.-F. Yip, A. Bensaada, R. Leonelli,
J. L. Brebner, R. A. Masut, Proc. 8th Can. Semicond. Technol. Conf.,
3- "Characterization of Interface States in Thin Epitaxial Film In0.75Ga0.25P/Ag Diodes", A. Singh, R.A Masut, A. Bensaada, AIP Conference Proceedings, 378(1), p. 391-394, (1996). 4- "1-10 GHz Interface Engineered SiNx/InP/InGaAs HIGFET Technology", C.S. Sundararaman, M. Tazlauanu, P. Mihelich, A. Bensaada, R.A. Masut, . Proceedings of the 1996 8th International Conference on Indium Phosphide and Related Materials, p. 697-700, (1996).
5-
“Cathodoluminescence and TEM investigations of stress relaxation
mechanisms in GaxIn1-xP/InP heterostructures”, F. Cléton,
B. Sieber, A. Lefebvre, A. Bensaada, R.A. Masut, J.M. Bonard,
J.D. Ganière, and M. Ambri, Microsc. Semicond. Mater. Conf.,
6- "LP-MOVPE growth and
characterization of InxGa1-xAs/InP epilayers and multiple quantum wells using tertiarybutylarsine",
A. Bensaada, M. Suys, M. Beaudoin, P. Desjardins, L. Isnard,
A. Aït Ouali, R.A. Masut, R. W. Cochrane, J. F. Currie et G. L'Espérance,
Proceedings of the Sixth European Workshop on Metal-organic Vapour Phase
Epitaxy and Related Growth Techniques, Gand (Belgique), 25-28 Juin 1995.
7- "LP-MOVPE growth of InAs/In0.53Ga0.47As strained layer multiple quantum wells for long wavelength laser
application ", M. Beaudoin, A. Aït
Ouali, A. Bensaada, P. Desjardins, L. Isnard, R.A. Masut, J.L.
Brebner, J. F. Currie et G. L'Espérence, Proceedings of the 8th
International Conference on Superlattices, Microstructures and Microdevices,
Cincinnati (Ohio) 20-25 Août 1995.
8- "Evidence for exciton
condensation in type II InP/GaInP MQW's",
A. Chennouf, R. Leonelli, A. Bensaada, et R.A. Masut, Proceedings
of the March Meeting of the American Physical Society, San José, California,
20-22 Mars 1995.
9-
"Strain relaxation in
compressive InAsP/InP and tensile GaInP/InP multilayers: a comparative
study of structural and optical properties",
A. Bensaada, P. Desjardins, M. Beaudoin, R.A. Masut, A.
Chennouf, R. Leonelli, J. L. Brebner, R. W. Cochrane et G. L'Espérance,
7th Canadian Semiconductor Technology Conference, Ottawa,
14-18 Août 1995.
10- "Propriétés optiques
et structurales de puits quantiques sous contraintes InAsP/InP obtenus
par LP-MOVPE", M. Beaudoin, R.A. Masut,
A. Bensaada, R. Leonelli, P. Desjardins, L. Isnard et
G. L'Espérance, 7th Canadian Semiconductor Technology Conference,
Ottawa, 14-18 Août 1995.
11- "Comparison of metalorganic
vapor phase epitaxy of InP/InP and InGaAs/InP structures over patterned
and unpatterned substrates", X. B.
Hao, M. Beaudoin, A. Bensaada, L. Isnard, R.A. Masut et
J. F. Currie, 7th Canadian Semiconductor Technology Conference,
Ottawa, 14-18 Août 1995.
12- "Dislocation-enhanced
diffusion in heteroepitaxial GaInP/InP:S",
A. Bensaada, R.W. Cochrane et R.A. Masut, Proceedings of the
6th International Conference on Indium Phosphide and Related
Materials, Santa Barbara, Californie, 28-31 Mars 1994.
13- "Band offsets of InAsP/InP
strained quantum wells grown by LP-MOVPE using TBAs", M. Beaudoin, R.A. Masut, L. Isnard, P. Desjardins, A. Bensaada,
G. L'Espérence et R. Leonelli, Material Research Society proceedings,
Vol. 358, Boston, 28 Nov.-2 Dec. 1994.
14- "Luminescence fluctuations
in GaInP/InP heterostructures", F.
Cleton, B. Sieber, A. Bensaada et d R.A. Masut, Proceedings of
the 13th International Congress of Electon Microscopy,
Paris, 17-22 Juillet 1994.
15-
"Origine
des fluctuations de luminescence dans un système en tension GaInP/InP", F. Cleton, B. Sieber, A. Bensaada et
R.A. Masut, Congrés D.E.S.: Défauts Étendus dans les Semiconducteurs,
Marseille, 27-28 Juin 1994.
16-
"Optical
and structural properties of GaxIn1-xP/InP quantum
wells with strained barriers",
A. Bensaada, J.L. Brebner, A. Chennouf, R.W. Cochrane, J.T. Graham,
R. Leonelli et R.A. Masut, Proceedings of the 5th International
Conference on Indium Phosphide and Related Materials, Paris, 18-22 Avril
1993.
17- " High resolution x-ray
diffraction study of strain relaxation and interface roughness in GaInP/InP
strained heterostructures", A. Bensaada,
R.W. Cochrane et R.A. Masut, 4th International Meeting on
Materials Science, Tlemcen, Algérie, 27-29 Avril 1993.
18- "Depth-resolved cathodoluminescence
study of GaInP/InP heterojunctions grown by MOCVD", F. Cleton, B. Sieber, A. Bensaada, L. Isnard et R.A. Masut,
Proceedings of the 8th Oxford Conference on Microscopy of
Semiconducting Materials, Oxford, GB, 5-8 Avril 1993.
19- "Growth efficiency and
distribution coefficient of GaInP/InP epilayers and heterostructures", A. Bensaada, R.W. Cochrane et R.A. Masut, 6th Canadian
Semiconductor Technology Conference, Ottawa, 11-13 Août 1992 (publié dans Can. J. Phys).
20-
"Simulation de diffraction à haute résolution
de rayons-x de couches GaInP/InP sous contraintes", A.Bensaada, R.W.Cochrane et R.A.Masut, 60éme Congrés de l'ACFAS, Montréal,
11-15 Mai 1992.
21-
"Etude de la photoconductivité et de la photoconductivité
persistante sur des couches GaInP/InP:Fe obtenues par MOCVD",
G. Zhao, Y.G. Zhao, A. Bensaada, J.L. Brebner et R.A. Masut,
60éme Congrés de l'ACFAS, Montréal, 11-15 Mai 1992
22-
"Etude de la photoconductivité des couches
épitaxiales InP/InP:Fe préparées par MOCVD", K. Gu, A. Bensaada, J.L. Brebner, P.
Cova et R.A. Masut, 59éme Congrés de l'ACFAS, Sherbrooke,
20-24 Mai 1991.
23-
"Effet
des paramètres de croissance sur les couches épitaxiales d'InP", P.Cova, A. Bensaada, R. Leonelli, C.A.
Tran, R.A. Masut et J.F. Currie, 5th Canadian Semiconductor
Technology Conference, Ottawa, 14-16 Août 1990 (publié dans Can. J. Phys). |